By Gan Fuxi, Wang Yang
In the large info period, facts garage is without doubt one of the cores within the complete details chain, which include creation, move, sharing, and at last processing. through the years, the expansion of information quantity has been explosive. at the present time, numerous garage companies desire thoughts with greater density and ability. furthermore, details garage within the large info functions could be eco-friendly, secure, and lengthy existence. The garage density of stories was once principally better lately as a result of swift improvement of nanotechnology. The minimal function measurement of optical, magnetic, and electric stories is already on the nanometer scale. in addition, the interdisciplinary cooperation of nanotechnology can facilitate the improvement of knowledge garage expertise to accomplish larger operation pace, decrease energy intake, and elevated retention time. This e-book compiles the state of the art study growth of nanometer-scale information garage. the most subject matters lined contain optical reminiscence, random entry reminiscence, magnetic reminiscence, and hybrid reminiscence. The textual content emphasizes more effective equipment for facts garage improvement and purposes.
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Additional info for Data storage at the nanoscale : advances and applications
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If the laser wavelength remains to be 405 nm, the minimum resolvable mark length can be calculated by comparing the NA of the near-field pickup system with that of the Blu-ray system. 85, which enables the system to resolve a minimum mark length of 138 nm when the laser wavelength is 405 nm. 45 = 81 nm. The estimated capacity for a disk is about 100 GB/layer. 10 Schematic of near-field recording systems: (a) The hemisphere configuration, (b) Super-hemisphere configuration. However, if we want to further increase the capacity of the disk, first surface recording is necessary, which may allow only a few nm to 10 nm cover layer on the disk, depending on the actual focused spot size.
Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluencies, J. Appl. , 106, 063501. 9. , and Liu, H. (2007). Observation of ultrafast carrier dynamics in amorphous GeSbTe films induced by femtosecond laser pulses, J. Appl. , 101, 033127. 10. Vikhnin, V. , Liu H. (2005). The model of ultrafast light-induced insulator-metal phase transition in vanadium oxide, J. Phys. (c), 21, 44–49. © 2015 by Taylor & Francis Group, LLC 17 © 2015 by Taylor & Francis Group, LLC Chapter 2 Super-Resolution Optical Data Storage Using Binary Optics Wang Haifenga and Gan Fuxib,c aUniversity of Shanghai for Science & Technology, 516 Jun Gong Road, Shanghai 200093, China.